欧美 日韩 国产精品,亚洲欧洲国产性爱视频,国产精品色综合一区二区三区,野花社区视频www中国,楼梯间被h肉邻居,激情偷拍自拍,娱乐圈调教黄暴hh文

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density,having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform;
2. 650V breakdown voltage,Ic=160A@Tc=100℃;
3. Low conduction loss,low switching loss;
4. Copacked with Very?soft,fast?recovery?antiparallel?diode;
SPECIFICATION

DGQ160N65CTS2A

Related new products

N30V Trench MOSFET for PD VBUS

Micro-pattern Trenches IGBT for Servo Controller & Frequency Converter & Industrial Power Supply

Low Power SCR&TRIAC for Leakage Protection

Small signal SOT-723 new package

GBU Package Extended 35A-50A High Current Series Products

TOLL N100V MOSFETs for Industrial

IGBT 50A 1200V Discrete for Industrial Control

N60V SGT MOSFET

YBS2G Gulling Patch Rectifier Bridge

1200V 40mΩ SiC MOSFET