欧美 日韩 国产精品,亚洲欧洲国产性爱视频,国产精品色综合一区二区三区,野花社区视频www中国,楼梯间被h肉邻居,激情偷拍自拍,娱乐圈调教黄暴hh文

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density,having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform;
2. 650V breakdown voltage,Ic=160A@Tc=100℃;
3. Low conduction loss,low switching loss;
4. Copacked with Very?soft,fast?recovery?antiparallel?diode;
SPECIFICATION

DGQ160N65CTS2A

Related new products

TOLL N100V MOSFETs for Industrial

Power Transistors for Energy storage,Industrial Control,Consumer Electronics,etc

SOD-323FL Schottky

TO-252 Package Power Transistor for Motor Driver & High Power Frequency Converter

High-side+Low-side PDFN5060 N30V Mosfet for PC Mainboard

SGT N60V MOSFET for Clean Energy Field

YBS2G Gulling Patch Rectifier Bridge

N40V SGT MOSFET for Automotive Motor Drives

MOSFET for High Power DC-DC

Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter